High-temperature (210/spl deg/C) operation of long-wavelength strained quantum well lasers on InGaAs ternary substrates

Author

Otsubo, K. ; Shoji, Hajime ; Kusunoki, Takashi ; Suzuki, Takumi ; Uchida, Tomoyuki ; Nishijima, Yosuke ; Nakajima, Kensuke ; Ishikawa, Hiroshi

Author_Institution

RWCP Opt. Interconnection Fujitsu Lab., Atsugi, Japan

fYear

1998

fDate

3-8 May 1998

Firstpage

292

Abstract

Summary form only given. Lasing at 210 C has been achieved in long-wavelength strained InAlGaAs quantum well lasers on InGaAs ternary substrates. This lasing temperature is the highest for long wavelength semiconductor lasers.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; substrates; 210 C; DFB lasers; InAlGaAs; InGaAs; InGaAs ternary substrates; high-temperature operation; lasing temperature; long wavelength semiconductor lasers; long-wavelength strained InAlGaAs quantum well lasers; long-wavelength strained quantum well lasers; Indium gallium arsenide; Laboratories; Optical interconnections; Quantum well lasers; Semiconductor lasers; Substrates; Temperature dependence; Temperature distribution; Temperature sensors; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676182

Filename

676182