Title :
High-temperature (210/spl deg/C) operation of long-wavelength strained quantum well lasers on InGaAs ternary substrates
Author :
Otsubo, K. ; Shoji, Hajime ; Kusunoki, Takashi ; Suzuki, Takumi ; Uchida, Tomoyuki ; Nishijima, Yosuke ; Nakajima, Kensuke ; Ishikawa, Hiroshi
Author_Institution :
RWCP Opt. Interconnection Fujitsu Lab., Atsugi, Japan
Abstract :
Summary form only given. Lasing at 210 C has been achieved in long-wavelength strained InAlGaAs quantum well lasers on InGaAs ternary substrates. This lasing temperature is the highest for long wavelength semiconductor lasers.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; substrates; 210 C; DFB lasers; InAlGaAs; InGaAs; InGaAs ternary substrates; high-temperature operation; lasing temperature; long wavelength semiconductor lasers; long-wavelength strained InAlGaAs quantum well lasers; long-wavelength strained quantum well lasers; Indium gallium arsenide; Laboratories; Optical interconnections; Quantum well lasers; Semiconductor lasers; Substrates; Temperature dependence; Temperature distribution; Temperature sensors; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676182
