DocumentCode :
3543752
Title :
Thermal spin transport and applications
Author :
Huang, Shell Ying ; Wang, W.G. ; Qu, Dexin ; Lee, S.F. ; Kwo, J. ; Chien, C.L.
Author_Institution :
Dept. of Phys. & Astron., Johns Hopkins Univ., Baltimore, MD, USA
fYear :
2012
fDate :
10-13 Dec. 2012
Abstract :
Spin caloritronics, exploiting the interaction between spin with heat currents, offers a promising path to further reduction in both the size and power consumption of solid state devices. Despite recent observations of spin dependent thermal transport by several groups, the underlying physical mechanism remains unsettled.1-3 Our study has demonstrated the profound effect of substrate on the spin-dependent thermal transport by patterned ferromagnetic thin films.4 This unexpected behavior is due to an out-of-plane temperature gradient imposed by the thermal conduction through the substrate, resulting in a mixture of anomalous Nernst effects (ANE) and spin Seebeck effect (SSE)1-3. Only with substrate-free sample have we determined the intrinsic spin-dependent thermal transport with characteristics and field sensitivity similar to those of anisotropic magnetoresistance (AMR) effect and planer Hall effect (PHE).4 These effects are sensitive to magnetic fields, encouraging for future applications such as spin thermoelectric coating, and sensors.
Keywords :
Hall effect; Seebeck effect; heat conduction; magnetoelectronics; magnetoresistance; spin coating; AMR effect; ANE; Nernst effects; PHE; SSE; anisotropic magnetoresistance effect; field sensitivity; heat currents; intrinsic spin-dependent thermal transport; magnetic fields; out-of-plane temperature gradient; patterned ferromagnetic thin films; planar Hall effect; power consumption; sensors; solid state devices; spin Seebeck effect; spin caloritronics; spin thermoelectric coating; substrate-free sample; thermal conduction; Heating; Magnetic field measurement; Substrates; Temperature measurement; Thermal conductivity; Thermoelectricity; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2012.6479022
Filename :
6479022
Link To Document :
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