DocumentCode :
3543753
Title :
Development and verification of a CMOS phototransistor noise model
Author :
Kostov, Plamen ; Gaberl, Wolfgang ; Hofbauer, Michael ; Zimmermann, Horst
Author_Institution :
Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria
fYear :
2013
fDate :
19-22 Aug. 2013
Firstpage :
41
Lastpage :
42
Abstract :
In this paper a noise model for phototransistors is presented. Noise measurements and Gummel measurements on four different phototransistors were performed to verify the noise model. In addition, the output noise current density was modeled and compared with the measurements. A maximum difference of less than 12 % is noticed.
Keywords :
MOSFET; current density; integrated optoelectronics; noise measurement; phototransistors; semiconductor device models; semiconductor device noise; CMOS phototransistor noise model; Gummel measurements; noise measurements; output noise current density; Current measurement; Density measurement; Integrated circuit modeling; Noise; Noise measurement; Phototransistors; Semiconductor device modeling; current gain; gummel; noise; noise model; phototransistor; pin; pnp; shot noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
ISSN :
2158-3234
Print_ISBN :
978-1-4673-6309-9
Type :
conf
DOI :
10.1109/NUSOD.2013.6633114
Filename :
6633114
Link To Document :
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