DocumentCode
3543753
Title
Development and verification of a CMOS phototransistor noise model
Author
Kostov, Plamen ; Gaberl, Wolfgang ; Hofbauer, Michael ; Zimmermann, Horst
Author_Institution
Inst. of Electrodynamics, Microwave & Circuit Eng., Vienna Univ. of Technol., Vienna, Austria
fYear
2013
fDate
19-22 Aug. 2013
Firstpage
41
Lastpage
42
Abstract
In this paper a noise model for phototransistors is presented. Noise measurements and Gummel measurements on four different phototransistors were performed to verify the noise model. In addition, the output noise current density was modeled and compared with the measurements. A maximum difference of less than 12 % is noticed.
Keywords
MOSFET; current density; integrated optoelectronics; noise measurement; phototransistors; semiconductor device models; semiconductor device noise; CMOS phototransistor noise model; Gummel measurements; noise measurements; output noise current density; Current measurement; Density measurement; Integrated circuit modeling; Noise; Noise measurement; Phototransistors; Semiconductor device modeling; current gain; gummel; noise; noise model; phototransistor; pin; pnp; shot noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location
Vancouver, BC
ISSN
2158-3234
Print_ISBN
978-1-4673-6309-9
Type
conf
DOI
10.1109/NUSOD.2013.6633114
Filename
6633114
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