Title :
Progress of STT-MRAM technology and the effect on normally-off computing systems
Author :
Yoda, Hidehiko ; Fujita, S. ; Shimomura, Naoharu ; Kitagawa, Eiji ; Abe, Kiyohiko ; Nomura, Keigo ; Noguchi, Hiroki ; Ito, Junichi
Author_Institution :
Center For Semicond. R&D, Toshiba Corp., Kawasaki, Japan
Abstract :
In this paper, the progress of P-MTJs is reviewed and prospects for the normally-off memory hierarchy based on new results are discussed.
Keywords :
MRAM devices; P-MTJ; STT-MRAM technology; normally-off computing systems; normally-off memory hierarchy; spin transfer torque; Cache memory; Computers; Magnetic tunneling; Market research; Nonvolatile memory; Random access memory; Switches;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479023
