Present and prospects of high T/sub 0/ long-wavelength lasers on InGaAs ternary substrate

Summary form only given. Recently we have realized lasers with excellent temperature performance on the ternary substrate. Here, discussions are made on details of InGaAs bulk crystal growth, laser design, the performances, factors limiting the temperature performances, and on the future prospects of high T/sub o/ lasers. Typical growth of the InGaAs bulk crystal consists of two steps. First, a seed ternary crystal with In content of around 25 percent was prepared using the Bridgman method. Following the Bridgman growth, InGaAs with uniform In composition was grown using a newly developed multicomponent zone growth method.