Title :
1.3-/spl mu/m AlGaInAs/InP strained multiple quantum well lasers for high-temperature operation
Author :
Ishikawa, T. ; Higashi, T. ; Uchida, T. ; Yamamoto, T. ; Fujii, T. ; Shoji, H. ; Kobayashi, M.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Summary form only given. High-temperature operation of 1.3-/spl mu/m semiconductor lasers is required for optical subscriber systems. AlGaInAs-InP strained multiple quantum well (MQW) lasers are promising devices because of their superior temperature characteristics. In this work, we investigated the dependence of threshold current density and characteristic temperature (T/sub c/) on well thickness. Ridge waveguide lasers with 6-nm-thick wells exhibited high T/sub c/ of 125 K.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 mum; 125 K; 6 nm; AlGaInAs-InP; AlGaInAs-InP strained MQW lasers; AlGaInAs/InP strained multiple quantum well lasers; characteristic temperature; high-temperature operation; optical subscriber systems; ridge waveguide lasers; temperature characteristics; threshold current density; well thickness; Chemical lasers; Diode lasers; Electrons; Laboratories; Optical waveguides; Pulse measurements; Quantum well lasers; Temperature dependence; Threshold current; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676185
