1.3-/spl mu/m AlGaInAs/InP strained multiple quantum well lasers for high-temperature operation

Author

Ishikawa, T. ; Higashi, T. ; Uchida, T. ; Yamamoto, T. ; Fujii, T. ; Shoji, H. ; Kobayashi, M.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1998

fDate

3-8 May 1998

Firstpage

295

Abstract

Summary form only given. High-temperature operation of 1.3-/spl mu/m semiconductor lasers is required for optical subscriber systems. AlGaInAs-InP strained multiple quantum well (MQW) lasers are promising devices because of their superior temperature characteristics. In this work, we investigated the dependence of threshold current density and characteristic temperature (T/sub c/) on well thickness. Ridge waveguide lasers with 6-nm-thick wells exhibited high T/sub c/ of 125 K.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 mum; 125 K; 6 nm; AlGaInAs-InP; AlGaInAs-InP strained MQW lasers; AlGaInAs/InP strained multiple quantum well lasers; characteristic temperature; high-temperature operation; optical subscriber systems; ridge waveguide lasers; temperature characteristics; threshold current density; well thickness; Chemical lasers; Diode lasers; Electrons; Laboratories; Optical waveguides; Pulse measurements; Quantum well lasers; Temperature dependence; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676185

Filename

676185