• DocumentCode
    3543780
  • Title

    Boolean and non-Boolean computation with spin devices

  • Author

    Sharad, Mrigank ; Augustine, Charles ; Roy, Kaushik

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2012
  • fDate
    10-13 Dec. 2012
  • Abstract
    Recently several device and circuit design techniques have been explored for applying nano-magnets and spin torque devices like spin valves and domain wall magnets in computational hardware. However, most of them have been focused on digital logic, and, their benefits over robust and high performance CMOS remains debatable. Ultra-low voltage, current-mode operation of magneto-metallic spin torque devices can potentially be more suitable for non-Boolean logic like neuromorphic computation, which involve analog processing. Device circuit co-design for different classes of neuromorphic architectures using spin-torque based neuron models along with DWM or other memristive synapses show that the spin-based neuromorphic designs can achieve 15X-100X lower computation energy for applications like, image processing, data-conversion, cognitive-computing, pattern matching and programmable-logic, as compared to state of art CMOS designs.
  • Keywords
    CMOS logic circuits; magnetic logic; magnetoelectronics; nanomagnetics; neural chips; Boolean computation; DWM; analog processing; circuit design techniques; cognitive-computing; current-mode operation; data-conversion; device circuit codesign; digital logic; domain wall magnets; high performance CMOS design; image processing; magnetometallic spin torque devices; memristive synapses; nanomagnets; neuromorphic architectures; neuromorphic computation; nonBoolean computation; nonBoolean logic; pattern matching; programmable-logic; spin valves; spin-based neuromorphic designs; spin-torque based neuron models; CMOS integrated circuits; Magnetic domain walls; Magnetic domains; Magnetic tunneling; Neurons; Perpendicular magnetic anisotropy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2012 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4673-4872-0
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2012.6479026
  • Filename
    6479026