DocumentCode
3543780
Title
Boolean and non-Boolean computation with spin devices
Author
Sharad, Mrigank ; Augustine, Charles ; Roy, Kaushik
Author_Institution
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
2012
fDate
10-13 Dec. 2012
Abstract
Recently several device and circuit design techniques have been explored for applying nano-magnets and spin torque devices like spin valves and domain wall magnets in computational hardware. However, most of them have been focused on digital logic, and, their benefits over robust and high performance CMOS remains debatable. Ultra-low voltage, current-mode operation of magneto-metallic spin torque devices can potentially be more suitable for non-Boolean logic like neuromorphic computation, which involve analog processing. Device circuit co-design for different classes of neuromorphic architectures using spin-torque based neuron models along with DWM or other memristive synapses show that the spin-based neuromorphic designs can achieve 15X-100X lower computation energy for applications like, image processing, data-conversion, cognitive-computing, pattern matching and programmable-logic, as compared to state of art CMOS designs.
Keywords
CMOS logic circuits; magnetic logic; magnetoelectronics; nanomagnetics; neural chips; Boolean computation; DWM; analog processing; circuit design techniques; cognitive-computing; current-mode operation; data-conversion; device circuit codesign; digital logic; domain wall magnets; high performance CMOS design; image processing; magnetometallic spin torque devices; memristive synapses; nanomagnets; neuromorphic architectures; neuromorphic computation; nonBoolean computation; nonBoolean logic; pattern matching; programmable-logic; spin valves; spin-based neuromorphic designs; spin-torque based neuron models; CMOS integrated circuits; Magnetic domain walls; Magnetic domains; Magnetic tunneling; Neurons; Perpendicular magnetic anisotropy;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4673-4872-0
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2012.6479026
Filename
6479026
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