Efficiency enhancement in InGaN/GaN light-emitting diodes by decreasing the thickness of last barrier

InGaN/GaN light emitting diodes (LEDs) with different thickness of the last quantum barrier (LQB) near the p-layers is studied. Simulation results show that GaN-based LEDs with thinner LQB exhibit much higher output power and smaller efficiency droop than conventional LEDs due to the better electrons confinement in the quantum wells, which leads to efficient recombination of electrons and holes in the active region and thereby a significant enhancement in optical performance.