UHF IGZO Schottky diode

Author

Chasin, Adrian ; Steudel, Soeren ; Vanaverbeke, F. ; Myny, Kris ; Nag, Manoj ; Tung-Huei Ke ; Schols, Sarah ; Gielen, G. ; Genoe, Jan ; Heremans, Paul

Author_Institution

imec, Leuven, Belgium

fYear

2012

fDate

10-13 Dec. 2012

Abstract

High-performance Schottky diodes based on amorphous IGZO (Indium-Gallium-Zinc Oxide) semiconductor were fabricated and fully characterized. S-parameter measurements and subsequent analysis prove that these diodes have a cut-off frequency over 900MHz at 0V bias, making these diodes a promising choice for UHF applications, such as energy-harvesters for passive RFID tags on foil. Moreover, when used in a single stage rectifier, the diodes provide DC voltages higher than 1.2V at 900MHz, which is enough supply for circuitry on foil based on current metal-oxides technologies (1,2).

Keywords

II-VI semiconductors; S-parameters; Schottky diodes; UHF diodes; amorphous semiconductors; gallium compounds; indium compounds; wide band gap semiconductors; zinc compounds; InGaZnO; S-parameter measurements; UHF IGZO Schottky diode; amorphous IGZO semiconductor; current metal-oxides technologies; high-performance Schottky diodes; passive RFID tags; single stage rectifier; voltage 0 V; Capacitance; Frequency measurement; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6479030

Filename

6479030