Title :
The dispersion dependence of nonlinear optical absorption transition in silicon PIN photodiode
Author :
Haoyang Cui ; Yongpeng Xu ; Ting Qian ; Jundong Zeng ; Zhong Tang
Author_Institution :
Sch. of Electron & Inf. Eng., Shanghai Univ. of Electr. Power, Shanghai, China
Abstract :
This paper presents an experimental study on the dispersion dependence of two-photon absorption (TPA) between 0.689~0.912 eV in a Si-base PIN photodiode. The obvious TPA process is clearly observed as the nonlinear enhancement of peak photoresponse on the incident light intensity in the power of 2. The tendency of the TPA coefficient increases with the incident photon energy increasing. The maximum enhancement factor of the TPA coefficient has been achieved as high as 4 times. This dispersion dependence of TPA has been qualitatively interpreted as when the photon energy increases, the electrons of valance band excited by TPA find an increasing availability states of conduction band by phonon assistance.
Keywords :
conduction bands; elemental semiconductors; nonlinear optics; optical dispersion; p-i-n photodiodes; phonons; silicon; two-photon spectra; valence bands; Si; conduction band; dispersion dependence; electron volt energy 0.689 eV to 0.912 eV; incident light intensity; incident photon energy; nonlinear optical absorption transition; peak photoresponse; phonon assistance; silicon PIN photodiode; two-photon absorption; valance band; Absorption; Junctions; Measurement by laser beam; Nonlinear optics; Photodiodes; Photonics; Silicon; PIN photodiode; photoresponse; two-photon absorption;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4673-6309-9
DOI :
10.1109/NUSOD.2013.6633122
