Title :
Fully coupled thermoelectroelastic simulations of GaN devices
Author :
Ancona, Mario G.
Author_Institution :
Code 6876, Naval Res. Lab. Washington, Washington, DC, USA
Abstract :
The continuum equations describing the fully coupled electrical, mechanical and thermal behaviors of GaN devices are presented and illustrated with a variety of examples from RF and power electronics.
Keywords :
III-V semiconductors; electrostatics; gallium compounds; semiconductor devices; thermal analysis; thermoelasticity; wide band gap semiconductors; GaN; RF electronics; and power electronics; continuum equations; fully coupled electrical behaviors; fully coupled thermoelectroelastic simulations; mechanical behaviors; thermal behaviors; Aluminum gallium nitride; Electric fields; Equations; Gallium nitride; HEMTs; Mathematical model; Stress;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479037
