Facet phase dependence of complex and index-coupled DFB lasers grown over V-grooves by MBE

Author

Robadey, J. ; Martin, D. ; Silva, P.C. ; Reinhart, F.K.

Author_Institution

Inst. for Micro- and Optoelectron., Fed. Inst. of Technol., Lausanne, Switzerland

fYear

1998

fDate

3-8 May 1998

Firstpage

305

Lastpage

306

Abstract

Summary form only given. In our approach a periodic active layer is grown by molecular beam epitaxy (MBE) over a V-groove patterned substrate. Instabilities due to saturation are thus avoided. Compared to index coupling (IC), complex coupling (CC) reduces the facet phase dependence of the lasers, but some singular facet phase combinations still may induce instabilities and/or multimode behavior. We investigate the monomode yield by simulations and measurements of a batch consisting of over 80 IC and CC lasers with random as-cleaved facets.

Keywords

distributed feedback lasers; molecular beam epitaxial growth; optical fabrication; refractive index; semiconductor growth; semiconductor lasers; MBE growth; V-groove patterned substrate; V-grooves; complex-coupled DFB lasers; facet phase dependence; index-coupled DFB lasers; molecular beam epitaxy; monomode yield; multimode behavior; periodic active layer; random as-cleaved facets; singular facet phase combinations; Diffraction gratings; Distributed feedback devices; Laser feedback; Laser theory; Laser tuning; Mirrors; Molecular beam epitaxial growth; Power lasers; Rotation measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676201

Filename

676201