Modelling the Auger Recombination rates of GaAs(1-x)Bix alloys

We calculate the |Conduction, Heavy Hole (HH)〉 - |Split-off Hole (SO), HH〉 (CHSH) Auger Recombination rates for GaAs_(1-x)Bi_x alloys, which are candidates for highly efficient telecommunication devices. A ten-band, tight-binding method, including spin-orbit coupling, was performed on a 9×9×9 strained supercell in order to generate an accurate band structure to perform the calculation on. This band structure was then unfolded to give a true E-k relation. As predicted by experiment, there should be a decrease in the Auger recombination rate as the concentration of Bismuth increases ending in a suppression at greater than ~11% Bismuth.