DocumentCode :
3543913
Title :
Modelling the Auger Recombination rates of GaAs(1-x)Bix alloys
Author :
Maspero, R. ; Sweeney, S.J. ; Florescu, Marian
Author_Institution :
Adv. Technol. Inst. & Dept. of Phys., Univ. of Surrey, Guildford, UK
fYear :
2013
fDate :
19-22 Aug. 2013
Firstpage :
81
Lastpage :
82
Abstract :
We calculate the |Conduction, Heavy Hole (HH)〉 - |Split-off Hole (SO), HH〉 (CHSH) Auger Recombination rates for GaAs(1-x)Bix alloys, which are candidates for highly efficient telecommunication devices. A ten-band, tight-binding method, including spin-orbit coupling, was performed on a 9×9×9 strained supercell in order to generate an accurate band structure to perform the calculation on. This band structure was then unfolded to give a true E-k relation. As predicted by experiment, there should be a decrease in the Auger recombination rate as the concentration of Bismuth increases ending in a suppression at greater than ~11% Bismuth.
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; energy gap; gallium arsenide; spin-orbit interactions; tight-binding calculations; E-k relation; GaAs(1-x)Bix; band structure; conduction Auger recombination rate; heavy hole Auger recombination rate; spin-orbit coupling; split-off hole Auger recombination rate; strained supercell; ten-band tight-binding method; Bismuth; Charge carrier processes; Communications technology; Photonic band gap; Radiative recombination;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
ISSN :
2158-3234
Print_ISBN :
978-1-4673-6309-9
Type :
conf
DOI :
10.1109/NUSOD.2013.6633134
Filename :
6633134
Link To Document :
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