Modelling the Auger Recombination rates of GaAs(1-x)Bix alloys

Author

Maspero, R. ; Sweeney, S.J. ; Florescu, Marian

Author_Institution

Adv. Technol. Inst. & Dept. of Phys., Univ. of Surrey, Guildford, UK

fYear

2013

fDate

19-22 Aug. 2013

Firstpage

81

Lastpage

82

Abstract

We calculate the |Conduction, Heavy Hole (HH)〉 - |Split-off Hole (SO), HH〉 (CHSH) Auger Recombination rates for GaAs_(1-x)Bi_x alloys, which are candidates for highly efficient telecommunication devices. A ten-band, tight-binding method, including spin-orbit coupling, was performed on a 9×9×9 strained supercell in order to generate an accurate band structure to perform the calculation on. This band structure was then unfolded to give a true E-k relation. As predicted by experiment, there should be a decrease in the Auger recombination rate as the concentration of Bismuth increases ending in a suppression at greater than ~11% Bismuth.

Keywords

Auger effect; III-V semiconductors; electron-hole recombination; energy gap; gallium arsenide; spin-orbit interactions; tight-binding calculations; E-k relation; GaAs_(1-x)Bi_x; band structure; conduction Auger recombination rate; heavy hole Auger recombination rate; spin-orbit coupling; split-off hole Auger recombination rate; strained supercell; ten-band tight-binding method; Bismuth; Charge carrier processes; Communications technology; Photonic band gap; Radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on

Conference_Location

Vancouver, BC

ISSN

2158-3234

Print_ISBN

978-1-4673-6309-9

Type

conf

DOI

10.1109/NUSOD.2013.6633134

Filename

6633134