State-of-the-art graphene transistors on hexagonal boron nitride, high-k, and polymeric films for GHz flexible analog nanoelectronics

We report graphene field-effect transistors on hexagonal boron nitride, high-k, and polymeric films featuring state-of-the-art electrical and mechanical properties on flexible substrates. The record electrical performance includes the highest ON current (~0.3mA/μm), the first demonstration of current saturation on flexible films and intrinsic gain, and the highest conversion gain flexible graphene frequency doubler. Extrinsic transit frequency of 2.23GHz, and maximum frequency of 1.15GHz are also achieved. In addition, robust electrical response down to 0.7mm mechanical bending radius is realized.