Title :
Damage from stimulated emission in optically pumped GaInN multiple quantum wells
Author :
Cohen, D.A. ; Margalith, T. ; Abare, A.C. ; Mack, M.P. ; Keller, S. ; Coldren, Larry A. ; DenBaars, Steven P. ; Clarke, D.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Summary form only given. Optically induced damage in GaInN multiple quantum wells was observed during the course of gain measurements using the variable excitation length method. Stimulated emission intensity from the doped sample was measured as a function of time, and damage patterns deduced.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical pumping; semiconductor quantum wells; stimulated emission; GaInN; GaInN multiple quantum well; damage; gain measurement; optical pumping; stimulated emission; variable excitation length method; Degradation; Doping profiles; Gallium nitride; Optical buffering; Optical pumping; Optical waveguides; Pump lasers; Quantum computing; Quantum well lasers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676208
