Title :
What is the problem with GaN-based VCSELs?
Author_Institution :
NUSOD Inst. LLC, Newark, DE, USA
Abstract :
In contrast to the impressive progress of GaN-based edge-emitting lasers in recent years, III-nitride vertical-cavity surface-emitting lasers (VCSELs) still exhibit severe performance limitations. Using advanced device simulation, this presentation evaluates design and material issues with different GaN-VCSEL concepts and identifies performance limiting internal mechanisms.
Keywords :
III-V semiconductors; gallium compounds; laser cavity resonators; surface emitting lasers; wide band gap semiconductors; GaN; III-nitride vertical-cavity surface-emitting lasers; VCSEL; edge-emitting lasers; Cavity resonators; Gallium nitride; Laser modes; Optical polarization; Temperature measurement; Vertical cavity surface emitting lasers;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4673-6309-9
DOI :
10.1109/NUSOD.2013.6633138
