VLSI platform for the monolithic integration of single-crystal Si NEMS capacitive resonators with low-cost CMOS

Author

Arcamone, J. ; Savoye, Mylene ; Arndt, Gregory ; Philippe, Julien ; Marcoux, C. ; Colinet, E. ; Duraffourg, L. ; Magis, T. ; Laurens, M. ; Monroy-Aguirre, A. ; Mazoyer, P. ; Ancey, P. ; Robert, Philippe ; Ollier, E.

Author_Institution

CEA, LETI, Grenoble, France

fYear

2012

fDate

10-13 Dec. 2012

Abstract

This work constitutes the first demonstration of monolithic integration of single-crystal silicon capacitive NEMS resonators with CMOS. With this approach, the efficiency of the electrical detection of the NEMS motion is outstanding and achieved with only seven transistors that are fabricated with a completely unmodified and very low-cost 0.35μm bulk CMOS technology.

Keywords

CMOS integrated circuits; VLSI; elemental semiconductors; micromechanical resonators; nanoelectromechanical devices; nanofabrication; silicon; NEMS motion; Si; VLSI platform; electrical detection; low-cost bulk CMOS technology; monolithic integration; single-crystal silicon capacitive NEMS resonators; size 0.35 mum; CMOS integrated circuits; CMOS technology; Capacitance; Nanoelectromechanical systems; Resonant frequency; Silicon; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6479048

Filename

6479048

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3543959