DocumentCode :
3544003
Title :
Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)
Author :
Yue Yang ; Shaojian Su ; Pengfei Guo ; Wei Wang ; Xiao Gong ; Lanxiang Wang ; Kain Lu Low ; Guangze Zhang ; Chunlai Xue ; Buwen Cheng ; Genquan Han ; Yee-Chia Yeo
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
fYear :
2012
fDate :
10-13 Dec. 2012
Abstract :
In this work, we report the first demonstration of GeSn pTFET. Good device characteristics were obtained. This may be attributed to direct BTBT, high hole mobility in the GeSn channel, and the formation of abruptly and heavily doped N+ source. The ION performance can be improved with further device optimization.
Keywords :
germanium compounds; hole mobility; tunnel transistors; tunnelling; GeSn; P-channel tunneling field effect transistor; TFET; band-to-band tunneling; device characteristics; device optimization; direct BTBT; pTFET; Junctions; Logic gates; Resistance; Silicon; Silicon germanium; Tin; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2012.6479053
Filename :
6479053
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3544003
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