Title :
III-Nitride LED efficiency droop models: A critical status review
Author_Institution :
NUSOD Inst. LLC, Newark, DE, USA
Abstract :
GaN- and AlN-based light-emitting diodes (LEDs) suffer from a severe efficiency reduction with increasing injection current (droop). Based on different theoretical models, several physical mechanisms have been proposed to explain the efficiency droop; however, conclusive experimental evidence is still missing for these proposals, and none of them is generally accepted. This presentation reviews and evaluates the main efficiency droop models currently under consideration.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; reviews; semiconductor device models; wide band gap semiconductors; AlN; AlN-based light-emitting diodes; GaN; GaN-based light-emitting diodes; III-nitride LED efficiency droop models; injection current; review; Current measurement; Density measurement; Light emitting diodes; Predictive models; Proposals; Radiative recombination;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4673-6309-9
DOI :
10.1109/NUSOD.2013.6633147
