Title :
Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire LED
Author :
Chi-kang Li ; Yuh-Renn Wu
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper presents the development of 3D fully self-consistent FEM Poisson and drift-diffusion solver. We use this solver to investigate the current flow in the coreshell multiple quantum well LED. The current spreading effect was examined to determine the carrier distribution at the sidewall of core-shell nanowire LEDs. The results revealed that a larger aspect ratio by increasing the nanowire height could increase the nonpolar-active area volume and reduce the droop effect at the same current density. Making the current spreading length exceed a greater nanowire height is critical for reducing the droop effect. In addition, this paper presents a discussion on the influences of the spacing between each nanowire on corresponding nanowire diameters.
Keywords :
III-V semiconductors; current density; finite element analysis; gallium compounds; indium compounds; light emitting diodes; nanophotonics; nanowires; quantum well devices; semiconductor device models; 3D fully self-consistent FEM Poisson solver; 3D fully self-consistent FEM drift-diffusion solver; InGaN-GaN; aspect ratio; carrier distribution; core-shell multiple quantum well nanowire LED; current density; current flow; current spreading; droop effect; nanowire diameters; nanowire height; nonpolar-active area volume; three dimensional numerical method; Conductivity; Current density; Gallium nitride; Light emitting diodes; Radiative recombination; Solid modeling; Three-dimensional displays;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4673-6309-9
DOI :
10.1109/NUSOD.2013.6633148