Influences of indium fluctuation to the carrier transport, auger recombination, and efficiency droop

Author

Yuh-Renn Wu ; Shu-ting Yeh ; Da-Wei Lin ; Chi-kang Li ; Hao-Chung Kuo ; Speck, James S.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2013

fDate

19-22 Aug. 2013

Firstpage

111

Lastpage

112

Abstract

Our recent preliminary studies show that the nanoscale indium fluctuation in InGaN quantum well LED plays an important key role in carrier transport, radiative recombination, Auger, and droop effects. In this paper, we further examine the influence indium fluctuation for different degree of fluctuation, auger coefficients, and non-radiative lifetime. The influence of different AlGaN electronic blocking layer will be discussed in this paper. The commercial grade LED will be used for comparison to examine the model accuracy.

Keywords

Auger effect; III-V semiconductors; aluminium compounds; carrier mobility; electron-hole recombination; fluctuations; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; Auger recombination; InGaN-AlGaN; carrier transport; efficiency droop effect; electronic blocking layer; nanoscale indium fluctuation; nonradiative lifetime; quantum well LED; radiative recombination; Charge carrier density; Computational modeling; Educational institutions; Indium; Light emitting diodes; Numerical models; Radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on

Conference_Location

Vancouver, BC

ISSN

2158-3234

Print_ISBN

978-1-4673-6309-9

Type

conf

DOI

10.1109/NUSOD.2013.6633149

Filename

6633149