Title :
Insights on radio frequency bilayer graphene FETs
Author :
Fiori, G. ; Iannaccone, Giuseppe
Author_Institution :
Dipt. di Ing. dell´´Inf., Univ. di Pisa, Pisa, Italy
Abstract :
In this work, we investigate through atomistic simulations the possible improvements achievable by using bilayer graphene as FET channel material for radio frequency applications, and the related challenges. Bilayer graphene shows better performance as compared to monolayer graphene in terms of larger output resistance, which in turns is beneficial both for the low frequency voltage gain, and the maximum gain frequency.
Keywords :
UHF field effect transistors; field effect transistors; graphene; C; FET channel material; atomistic simulations; monolayer graphene; radiofrequency bilayer graphene FET; Field effect transistors; Graphene; Photonic band gap; Resistance; Transconductance; Tunneling;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479059
