DocumentCode
3544053
Title
Simulation of random alloy effects in InGaN/GaN LEDs
Author
Lopez, Miguel ; Auf der Maur, M. ; Pecchia, Antonio ; Sacconi, F. ; Penazzi, Gabriele ; Di Carica, A.
Author_Institution
Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
fYear
2013
fDate
19-22 Aug. 2013
Firstpage
113
Lastpage
114
Abstract
We present atomistic simulations of InGaN quantum disk and quantum well structures considering randomly distributed In atoms. It is shown that the random alloy fluctuations lead to an intrinsic broadening of the optical emission lines with an asymmetric tail towards long wavelengths. The amount of broadening is found to be dependent on In content.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; spectral line broadening; wide band gap semiconductors; InGaN-GaN; LED; atomistic simulation; optical emission line broadening; quantum disk; quantum well structures; random alloy effects; random alloy fluctuations; Crystals; Gallium nitride; Light emitting diodes; Metals; Stationary state; Strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location
Vancouver, BC
ISSN
2158-3234
Print_ISBN
978-1-4673-6309-9
Type
conf
DOI
10.1109/NUSOD.2013.6633150
Filename
6633150
Link To Document