Title :
Simulation of random alloy effects in InGaN/GaN LEDs
Author :
Lopez, Miguel ; Auf der Maur, M. ; Pecchia, Antonio ; Sacconi, F. ; Penazzi, Gabriele ; Di Carica, A.
Author_Institution :
Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
Abstract :
We present atomistic simulations of InGaN quantum disk and quantum well structures considering randomly distributed In atoms. It is shown that the random alloy fluctuations lead to an intrinsic broadening of the optical emission lines with an asymmetric tail towards long wavelengths. The amount of broadening is found to be dependent on In content.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; spectral line broadening; wide band gap semiconductors; InGaN-GaN; LED; atomistic simulation; optical emission line broadening; quantum disk; quantum well structures; random alloy effects; random alloy fluctuations; Crystals; Gallium nitride; Light emitting diodes; Metals; Stationary state; Strain;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4673-6309-9
DOI :
10.1109/NUSOD.2013.6633150
