Title :
Investigation of light extraction efficiency in AlGaN deep ultraviolet LEDs using FDTD simulations
Author :
Han-Youl Ryu ; Jong-In Shim
Author_Institution :
Dept. Phys., Inha Univ., Incheon, South Korea
Abstract :
Light extraction efficiency (LEE) in AlGaN deep ultraviolet (UV) light-emitting diodes (LEDs) is investigated using three-dimensional finite-difference time-domain simulations. For flip-chip LED structures, LEE is obtained to be <;10% due to strong UV light absorption in the p-GaN layer. In addition, LEE of transverse-magnetic (TM) modes is found to be more than ten times smaller than that of transverse-electric (TE) modes, which explains the decreasing behavior of external quantum efficiency of UV LEDs with decreasing wavelengths.
Keywords :
III-V semiconductors; finite difference time-domain analysis; gallium compounds; light emitting diodes; wide band gap semiconductors; FDTD simulation; GaN; UV light absorption; UV light-emitting diodes; deep ultraviolet LED; external quantum efficiency; flip-chip LED structure; light extraction efficiency; three-dimensional finite-difference time-domain simulation; transverse-electric modes; transverse-magnetic modes; Aluminum gallium nitride; Computational modeling; Finite difference methods; Gallium nitride; Light emitting diodes; Quantum well devices; Time-domain analysis;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4673-6309-9
DOI :
10.1109/NUSOD.2013.6633151
