DocumentCode
3544076
Title
Impact of quasi-ballistic phonon transport on thermal properties in nanoscale devices: A Monte Carlo approach
Author
Kukita, Kentaro ; Adisusilo, Indra Nur ; Kamakura, Yoshinari
Author_Institution
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
fYear
2012
fDate
10-13 Dec. 2012
Abstract
In this work, a Monte Carlo simulation method is applied to study the phonon transport in nanoscale Si devices, and the impact of quasi-ballistic transport on the heat conduction properties in FinFETs is investigated. It is shown that the conventional method based on Fourier law significantly overestimates the heat flux from the Fin edge to the metal contact, which may result in the underestimation of the hot spot temperature.
Keywords
Fourier analysis; MOSFET; Monte Carlo methods; elemental semiconductors; heat conduction; phonons; silicon; FinFET; Fourier law; Monte Carlo simulation method; Si; heat conduction property; heat flux overestimation; hot spot temperature underestimation; metal contact; nanoscale device; quasiballistic phonon transport impact; thermal property; FinFETs; Heat sinks; Heating; Phonons; Scattering; Silicon; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4673-4872-0
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2012.6479061
Filename
6479061
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