Title :
Impact of quasi-ballistic phonon transport on thermal properties in nanoscale devices: A Monte Carlo approach
Author :
Kukita, Kentaro ; Adisusilo, Indra Nur ; Kamakura, Yoshinari
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
Abstract :
In this work, a Monte Carlo simulation method is applied to study the phonon transport in nanoscale Si devices, and the impact of quasi-ballistic transport on the heat conduction properties in FinFETs is investigated. It is shown that the conventional method based on Fourier law significantly overestimates the heat flux from the Fin edge to the metal contact, which may result in the underestimation of the hot spot temperature.
Keywords :
Fourier analysis; MOSFET; Monte Carlo methods; elemental semiconductors; heat conduction; phonons; silicon; FinFET; Fourier law; Monte Carlo simulation method; Si; heat conduction property; heat flux overestimation; hot spot temperature underestimation; metal contact; nanoscale device; quasiballistic phonon transport impact; thermal property; FinFETs; Heat sinks; Heating; Phonons; Scattering; Silicon; Thermal conductivity;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479061
