Title :
Gate control strategies for high efficiency charge pumps
Author :
Su, Feng ; Ki, Wing-Hung ; Tsui, Chi-ying
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
The paper presents systematic gate control strategies for charge pumps to enhance efficiency by turning all charge transfer MOS transistors on and off completely . Optimized topologies attain better efficiency when compared to existing designs, as confirmed by simulation and measurement results of charge pumps designed using a 0.35 μm CMOS n-well process.
Keywords :
CMOS integrated circuits; circuit optimisation; field effect transistor switches; integrated circuit design; network topology; voltage multipliers; 0.35 micron; charge transfer MOS transistors; efficiency enhancement; gate control strategies; high efficiency charge pump design; optimized topologies; CMOS process; Charge measurement; Charge pumps; Charge transfer; Control systems; Current measurement; Design optimization; MOSFETs; Topology; Turning;
Conference_Titel :
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN :
0-7803-8834-8
DOI :
10.1109/ISCAS.2005.1464985
