Phosphorus doped SiC Source Drain and SiGe channel for scaled bulk FinFETs

Author

Togo, Mitsuhiro ; Lee, Jae W. ; Pantisano, L. ; Chiarella, T. ; Ritzenthaler, R. ; Krom, Raymond ; Hikavyy, Andriy ; Loo, Roger ; Rosseel, Erik ; Brus, S. ; Maes, J.W. ; Machkaoutsan, V. ; Tolle, John ; Eneman, Geert ; Keersgieter, A.D. ; Boccardi, Guilla

Author_Institution

Imec, K.U. Leuven, Leuven, Belgium

fYear

2012

fDate

10-13 Dec. 2012

Abstract

A P-SiC (Phosphorus doped Si_1-xC_x) SD (Source Drain) was developed on bulk-Si based nMOS FinFETs (n-FinFETs). P-SiC epitaxial growth on SD provides strain to boost n-FinFET mobility and drive current. Combination of LA (Laser Anneal) and low temperature RTA recovers P-SiC and PSi (Phosphorus doped Si, Si_1-xP_x) strain. A SiGe clad channel on pMOS FinFETs (p-FinFETs) was investigated. Narrower Si fin and SiGe epitaxial growth on fins increase mobility and drive current, which is based on the same carrier transport mechanism as conventional phonon scattering without velocity overshoot around 14nm node.

Keywords

Ge-Si alloys; MOSFET; epitaxial growth; laser beam annealing; phosphorus; semiconductor epitaxial layers; semiconductor growth; silicon compounds; wide band gap semiconductors; Si; SiC:P; SiGe; bulk-silicon based nMOS FinFET; carrier transport mechanism; drive current; epitaxial growth; laser annealling; low temperature RTA; n-FinFET; n-FinFET mobility; pMOS FinFET; phonon scattering; phosphorus doped source drain; scaled bulk FinFET; Annealing; Epitaxial growth; FinFETs; Silicon; Silicon germanium; Strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6479064

Filename

6479064