Title :
Structure design of HgCdTe mid-wavelength photon trapping infrared focal plane arrays
Author :
Peng Zhang ; Zhen-Hua Ye ; Chun Lin ; Xiao-Ning Hu ; Rui-Jun Ding ; Li He
Author_Institution :
Key Lab. of Infrared Imaging Mater. & Detectors, Shanghai Inst. of Tech. Phys., Shanghai, China
Abstract :
Photon trapping structure in HgCdTe mid-wavelength infrared detectors is investigated in this study by exploiting the finite-difference time-domain (FDTD) technique. The quantum efficiency and the current-voltage characteristics have been numerically simulated, using commercial Technology Computer Aided Design (TCAD) software Apsys. Simulation results indicate that in contrast to the regular mesa structure, the photon trapping structure can reduce dark current and noise without degrading quantum efficiency.
Keywords :
II-VI semiconductors; cadmium compounds; finite difference time-domain analysis; focal planes; infrared detectors; mercury compounds; optical design techniques; photodetectors; semiconductor device models; technology CAD (electronics); FDTD technique; HgCdTe; TCAD software Apsys; current-voltage characteristics; dark current; finite-difference time-domain technique; mid-wavelength infrared detectors; mid-wavelength photon trapping infrared focal plane arrays; numerical simulation; optical noise; photon trapping structure; quantum efficiency; structural design; technology computer aided design; Absorption; Charge carrier processes; Dark current; Finite difference methods; Noise; Photonics; Time-domain analysis; FDTD; HgCdTe; photon trapping structure;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4673-6309-9
DOI :
10.1109/NUSOD.2013.6633158
