Author :
Guo, Wenyong ; Van der Plas, G. ; Ivankovic, A. ; Cherman, V. ; Eneman, Geert ; De Wachter, B. ; Togo, Mitsuhiro ; Redolfi, A. ; Kubicek, S. ; Civale, Y. ; Chiarella, T. ; Vandevelde, B. ; Croes, Kristof ; De Wolf, Ingrid ; Debusschere, I. ; Mercha, Abdel
Abstract :
This work provides for the first time an experimental assessment of the impact of thermo-mechanically induced stresses by copper through-silicon vias, TSVs, on fully depleted Bulk FinFET devices. Both n and p type FinFETs are significantly affected by TSV proximity, exhibiting lower impact on drive current with respect to the planar devices. The obtained results are in agreement with the thermo-mechanical models for Cu-TSV and are supported by the 4 point bending stress calibration.
Keywords :
MOSFET; calibration; copper; integrated circuit modelling; thermal stresses; three-dimensional integrated circuits; 4-point bending stress calibration; Cu; Si; TSV proximity; copper through-silicon vias; fully depleted Bulk FinFET devices; fully depleted bulk FinFET technology; n-type FinFET; p-type FinFET; planar devices; thermomechanical models; thermomechanically induced stresses; through silicon via induced mechanical stress; FinFETs; Sensitivity; Silicon; Stress; Temperature sensors; Thermal stresses; Through-silicon vias;
