DocumentCode :
3544127
Title :
Opportunities and challenges in device scaling by the introduction of EUV lithography
Author :
Ronse, K. ; De Bisschop, P. ; Vandenberghe, G. ; Hendrickx, Etienne ; Gronheid, R. ; Pret, A.V. ; Mallik, Abhidipta ; Verkest, D. ; Steegen, A.
Author_Institution :
Imec Leuven, Leuven, Belgium
fYear :
2012
fDate :
10-13 Dec. 2012
Abstract :
EUV lithography is generally considered as the technology to take over from 193nm immersion lithography, but has been delayed due to a number of critical problems that remain to be solved. The purpose of this paper is to illustrate the improvements in process complexity, reduced design restrictions and reduced processing costs in case EUVL would be available for the 14nm logic node and beyond. We have shown that the readiness of EUVL is critical to keep scaling the logic devices following the pace of Moore´s law, continuing the performance improvements of the devices at an acceptable processing cost and cycle time, still allowing sufficient freedom to the system designers in terms of design restrictions.
Keywords :
immersion lithography; logic circuits; ultraviolet lithography; EUV lithography; EUVL; Moore´s law; immersion lithography; logic devices; logic node; process complexity; reduced processing costs; size 14 nm; wavelength 193 nm; Complexity theory; Layout; Lithography; Logic gates; Optical reflection; Presses; Ultraviolet sources;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2012.6479067
Filename :
6479067
Link To Document :
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