Title :
Ti impact in C-doped phase-change memories compliant to Pb-free soldering reflow
Author :
Perniola, L. ; Noe, P. ; Hubert, Q. ; Souiki, S. ; Ghezzi, Giacomo ; Navarro, G. ; Cabrini, Alessandro ; Persico, A. ; Delaye, V. ; Blachier, D. ; Barnes, J.-P. ; Henaff, E. ; Tessaire, M. ; Souchier, E. ; Roule, A. ; Fillot, F. ; Ferrand, J. ; Fargeix, A
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
In this paper, we present a thorough physical-chemical analysis of an engineered PCM stack, where the integration of C-doping and the use of a Ti top layer allow obtaining an Amorphous As-Deposited (A-AD) phase stable against Back End-Of-Line (BEOL) thermal budget. This PCM stack is then integrated in devices, which are extensively tested in order to validate a novel pre-coding technique compliant to the Pb-free soldering reflow issue. Finally, an original design to optimize the distribution dispersion is presented.
Keywords :
amorphous semiconductors; carbon; phase change memories; precoding; reflow soldering; titanium; A-AD phase; C; Ti; amorphous as-deposited phase; distribution dispersion optimization; engineered PCM stack; phase-change memory; physical-chemical analysis; precoding technique; reflow soldering; Carbon; Phase change materials; Resistance; Soldering; Stress; Thermal stability;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479069
