DocumentCode :
3544157
Title :
Modelling of GaAs quantum dot embedded in a polymorph AlGaAs nano wire
Author :
Barettin, D. ; Platonov, Alexei V. ; Pecchia, Antonio ; Kats, Vladimir N. ; Cirlin, George E. ; Soshnikov, Iliya P. ; Bouravleuv, Alexei D. ; Besombes, Lucien ; Mariette, Henri ; Auf der Maur, M. ; Di Carlo, A.
Author_Institution :
Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
fYear :
2013
fDate :
19-22 Aug. 2013
Firstpage :
139
Lastpage :
140
Abstract :
We present a numerical model of quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures strictly based on experimental structures of polyphorm cylindrical nanocolumns.
Keywords :
III-V semiconductors; gallium arsenide; nanophotonics; nanowires; polymorphism; semiconductor quantum dots; semiconductor quantum wires; AlGaAs; GaAs; polymorph nanowire; polyphorm cylindrical nanocolumns; quasi one-dimensional semiconductor heterostructures; zero-dimensional semiconductor heterostructures; Approximation methods; Charge carrier processes; Crystals; Gallium arsenide; Photoluminescence; Quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2013 13th International Conference on
Conference_Location :
Vancouver, BC
ISSN :
2158-3234
Print_ISBN :
978-1-4673-6309-9
Type :
conf
DOI :
10.1109/NUSOD.2013.6633163
Filename :
6633163
Link To Document :
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