• DocumentCode
    3544215
  • Title

    Microscopic understanding and modeling of HfO2 RRAM device physics

  • Author

    Larcher, Luca ; Padovani, A. ; Pirrotta, O. ; Vandelli, Luca ; Bersuker, Gennadi

  • Author_Institution
    DISMI, Univ. di Modena e Reggio Emilia, Reggio Emilia, Italy
  • fYear
    2012
  • fDate
    10-13 Dec. 2012
  • Abstract
    In this paper we investigate the physical mechanisms governing operations in HfOx RRAM devices. Forming set and reset processes are studied using a model including power dissipation associated with the charge transport, and the corresponding temperature increase, which assists ion diffusion.
  • Keywords
    hafnium compounds; random-access storage; HfO2; RRAM devices; charge transport; ion diffusion; microscopic understanding; physical mechanisms governing operations; power dissipation; reset processes; set processes; Dielectrics; Hafnium compounds; Ions; Leakage current; Reliability; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2012 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4673-4872-0
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2012.6479077
  • Filename
    6479077
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3544215