DocumentCode :
3544215
Title :
Microscopic understanding and modeling of HfO2 RRAM device physics
Author :
Larcher, Luca ; Padovani, A. ; Pirrotta, O. ; Vandelli, Luca ; Bersuker, Gennadi
Author_Institution :
DISMI, Univ. di Modena e Reggio Emilia, Reggio Emilia, Italy
fYear :
2012
fDate :
10-13 Dec. 2012
Abstract :
In this paper we investigate the physical mechanisms governing operations in HfOx RRAM devices. Forming set and reset processes are studied using a model including power dissipation associated with the charge transport, and the corresponding temperature increase, which assists ion diffusion.
Keywords :
hafnium compounds; random-access storage; HfO2; RRAM devices; charge transport; ion diffusion; microscopic understanding; physical mechanisms governing operations; power dissipation; reset processes; set processes; Dielectrics; Hafnium compounds; Ions; Leakage current; Reliability; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0163-1918
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2012.6479077
Filename :
6479077
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3544215
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