Title :
Strain-compensated In/sub 0.7/Ga/sub 0.3/As-Al/sub 0.6/In/sub 0.4/As quantum cascade lasers for 3-5 /spl mu/m operation
Author :
Faist, J. ; Beck, M. ; Capasso, F. ; Sivco, D.L. ; Hutchinson, A.L. ; Cho, A.Y.
Author_Institution :
Neuchatel Univ., Switzerland
Abstract :
Summary form only given. We report quantum cascade lasers based on strained InGaAs-AlInAs at 3.5 /spl mu/m with optical powers up to 5 mW to T 280 K. Operations of the first buried-heterostructure QC lasers at 5 /spl mu/m also will be discussed.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; 280 K; 3.5 mum; 5 mW; 5 mum; In/sub 0.7/Ga/sub 0.3/As-Al/sub 0.6/In/sub 0.4/As; In/sub 0.7/Ga/sub 0.3/As-Al/sub 0.6/In/sub 0.4/As quantum cascade lasers; buried-heterostructure QC lasers; optical powers; strain-compensated; strained InGaAs-AlInAs; Chaos; Chemical lasers; Etching; Heat sinks; Optical refraction; Optical resonators; Optical scattering; Power generation; Power lasers; Quantum cascade lasers;
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
DOI :
10.1109/CLEO.1998.676265
