Suppression of crosstalk by using backside deep trench isolation for 1.12μm backside illuminated CMOS image sensor

Author

Kitamura, Yoshifumi ; Aikawa, H. ; Kakehi, Katsuhiko ; Yousyou, T. ; Eda, K. ; Minami, Takuya ; Uya, S. ; Takegawa, Yoshinari ; Yamashita, Hiromasa ; Kohyama, Y. ; Asami, Takuya

Author_Institution

Image Sensor Technol. Dev. Dept., Toshiba Corp., Oita, Japan

fYear

2012

fDate

10-13 Dec. 2012

Abstract

1.12μm backside illuminated CMOS image sensor with backside deep trench isolation (DTI) has been demonstrated for the first time. DTI is fabricated on backside pixel surface after wafer bonding and grinding process. Backside DTI makes its layout simple because no transistor isolation exists on backside. We have confirmed about 50% reduction of crosstalk by using backside DTI. The crosstalk of 1.12μm backside DTI pixel is lower than that of 1.4μm BSI pixel. This technology will be promising for 1.12μm and beyond.

Keywords

CMOS image sensors; crosstalk; grinding; interference suppression; isolation technology; wafer bonding; BSI; CMOS image sensor; backside DTI; backside illumination; backside pixel surface; crosstalk suppression; deep trench isolation; grinding process; optical fabrication; size 1.12 mum; wafer bonding; CMOS image sensors; Crosstalk; Diffusion tensor imaging; Image color analysis; Layout; Optical crosstalk; Reflection;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6479093

Filename

6479093