Electrochemical simulation of filament growth and dissolution in conductive-bridging RAM (CBRAM) with cylindrical coordinates

Author

Sen Lin ; Liang Zhao ; Jinyu Zhang ; Huaqiang Wu ; Yan Wang ; He Qian ; Zhiping Yu

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2012

fDate

10-13 Dec. 2012

Abstract

We have simulated the forming process and erase operation of Ag/GeS₂-based CBRAM in a fully 3D environment using cylindrical coordinates. Through numerical simulations, we demonstrate the combined effect of ion migration and electrochemical reaction on the filament evolution under electric field. Experimental results of forming/erase time vs. applied voltage and electrolyte thickness confirm the accuracy of the model.

Keywords

electrochemistry; electrolytes; forming processes; germanium compounds; numerical analysis; random-access storage; silver; 3D environment; Ag-GeS₂; CBRAM; applied voltage; conductive-bridging RAM; cylindrical coordinates; dissolution; electric field; electrochemical reaction; electrochemical simulation; electrolyte thickness; erase operation; erase time; filament evolution; filament growth; forming process; forming time; ion migration; numerical simulations; Cathodes; Electric fields; Electric potential; Equations; Ions; Mathematical model; Numerical models;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2012 IEEE International

Conference_Location

San Francisco, CA

ISSN

0163-1918

Print_ISBN

978-1-4673-4872-0

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2012.6479107

Filename

6479107