Title :
Electrochemical simulation of filament growth and dissolution in conductive-bridging RAM (CBRAM) with cylindrical coordinates
Author :
Sen Lin ; Liang Zhao ; Jinyu Zhang ; Huaqiang Wu ; Yan Wang ; He Qian ; Zhiping Yu
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
We have simulated the forming process and erase operation of Ag/GeS2-based CBRAM in a fully 3D environment using cylindrical coordinates. Through numerical simulations, we demonstrate the combined effect of ion migration and electrochemical reaction on the filament evolution under electric field. Experimental results of forming/erase time vs. applied voltage and electrolyte thickness confirm the accuracy of the model.
Keywords :
electrochemistry; electrolytes; forming processes; germanium compounds; numerical analysis; random-access storage; silver; 3D environment; Ag-GeS2; CBRAM; applied voltage; conductive-bridging RAM; cylindrical coordinates; dissolution; electric field; electrochemical reaction; electrochemical simulation; electrolyte thickness; erase operation; erase time; filament evolution; filament growth; forming process; forming time; ion migration; numerical simulations; Cathodes; Electric fields; Electric potential; Equations; Ions; Mathematical model; Numerical models;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479107
