DocumentCode :
35445
Title :
Fast Analytical Modeling of Dynamic Thermal Behavior of Semiconductor Devices and Circuits
Author :
Kwok, Kai H. ; d´Alessandro, Vincenzo
Author_Institution :
Skyworks Solutions, Inc., Newbury Park, CA, USA
Volume :
61
Issue :
4
fYear :
2014
fDate :
Apr-14
Firstpage :
1031
Lastpage :
1038
Abstract :
This paper presents a set of closed-form analytical expressions to approximate the transient solution to the heat equation without requiring any computationally intensive series summation. The parameters of these expressions can be easily extracted from the physical layout for constructing a thermal impedance matrix to be used in a self-consistent electrothermal circuit simulation of a large number of heat sources. These formulations are derived by assuming a small heat source compared to the chip area in a homogeneous chip with the boundary conditions of an adiabatic top and an isothermal bottom. The derivation allows heat sources to be located at a certain depth from the chip top. The expressions have been verified by comparison with 3-D numerical simulations.
Keywords :
integrated circuit modelling; integrated circuit packaging; semiconductor device models; semiconductor device packaging; thermal analysis; thermal management (packaging); analytical modeling; chip area; closed form analytical expressions; dynamic thermal behavior; heat equation; heat source; homogeneous chip; physical layout; self-consistent electrothermal circuit simulation; semiconductor circuits; semiconductor devices; thermal impedance matrix; transient solution; Equations; Heating; Impedance; Integrated circuit modeling; Mathematical model; Thermal analysis; Transient analysis; Electrothermal simulation; heterojunction bipolar transistors (HBT); mutual thermal coupling; self-heating; thermal impedance; transient analysis;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2014.2305991
Filename :
6767054
Link To Document :
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