DocumentCode :
3544537
Title :
The effect of higher order model decoupling capacitors in the design of a power delivery network
Author :
Chew, Li Wern
Author_Institution :
Intel Archit. Group (IAG), Intel Microelectonics (M) Sdn. Bhd., Bayan Lepas, Malaysia
fYear :
2012
fDate :
10-11 July 2012
Firstpage :
117
Lastpage :
122
Abstract :
Decoupling capacitors are widely used in power delivery network (PDN) design to mitigate switching noise from the integrated circuit (IC). Besides, they also provide a low-impedance path to shunt the transient energy to ground at the IC source. Since a real capacitor includes both parasitic inductance and resistance associated with the interconnection and package of the capacitor resulting in an increase in impedance, adequate decoupling capacitances in a PDN design are essential. Often, a capacitor is represented with a higher order model (HOM) of resistance, inductance and capacitance in power delivery simulation. This paper presents the findings from an investigation into the PDN performance using various HOM decoupling capacitors of the same capacitance. The reasons for the different HOM values with the same capacitance include the form factor, manufacturing processes and the operating temperature of the capacitors. From the study, it was found that both the form factor and the differences in the capacitors manufacturing process can cause a significant difference in the impedance profile as well as the voltage droop whereas the operating temperature has a much less impact on the PDN performance.
Keywords :
capacitors; integrated circuit noise; interconnections; interference suppression; HOM decoupling capacitors; IC source; PDN design; capacitor interconnection; capacitor manufacturing process; form factor; higher order model decoupling capacitor effect; impedance profile; integrated circuit; low-impedance path; manufacturing process; parasitic inductance; power delivery network design; power delivery simulation; switching noise mitigation; transient energy; voltage droop; Capacitance; Capacitors; Impedance; Noise; Silicon; Temperature; Transient analysis; Decoupling capacitor; higher order model; impedance profile; power delivery network; voltage droop;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ASQED), 2012 4th Asia Symposium on
Conference_Location :
Penang
Print_ISBN :
978-1-4673-2687-2
Type :
conf
DOI :
10.1109/ACQED.2012.6320486
Filename :
6320486
Link To Document :
بازگشت