Title :
Extremely high current density over 1000 A/cm2 operation in m-plane GaN small size LEDs with low efficiency droop and method for controlling radiation pattern and polarization
Author :
Inoue, Akira ; Kato, Ryota ; Yamada, Akimasa ; Yokogawa, Tomoyuki
Author_Institution :
Device Module Dev. Center, Panasonic Corp., Moriguchi, Japan
Abstract :
A high current density over 1000 A/cm2 operation in a small chip size m-plane GaN-LED has been successfully demonstrated. The m-plane GaN-LED with a chip size 450 × 450 μm2 has emitted 1353 mW in a light output power and 39.2% in an external quantum efficiency (EQE) at 1000 A/cm2 (1134 mA). The m-plane GaN-LED has showed asymmetric radiation characteristics. The radiation patterns are controlled by the surface of LED packages, the height of the LED chips, and the striped texture on the top m-plane surface.
Keywords :
current density; dielectric polarisation; electronics packaging; gallium compounds; light emitting diodes; radiation effects; EQE; GaN; LED chips; LED packages; asymmetric radiation characteristics; current 1134 mA; current density; efficiency droop; external quantum efficiency; m-plane GaN-LED; output power; polarization; power 1353 mW; radiation pattern; striped texture; Antenna radiation patterns; Ceramics; Current density; Gallium nitride; Gold; Light emitting diodes; Surface waves;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479114
