DocumentCode
3544549
Title
Room-temperature photonic crystal nanocavity light emitting diodes based on Ge self-assembled quantum dots
Author
Xuejun Xu ; Maruizumi, Takuya ; Shiraki, Yasuhiro
Author_Institution
Adv. Res. Labs., Tokyo City Univ., Tokyo, Japan
fYear
2012
fDate
10-13 Dec. 2012
Abstract
Current-injected light emitting diodes (LEDs) based on Ge self-assembled quantum dots embedded in photonic crystal (PhC) nanocavities are demonstrated by using a lateral PIN diode. Strong resonant electroluminescence (EL) is obtained at room-temperature when the injected current is larger than 50 μA. Sharp resonant peaks corresponding to the PhC cavity modes, with Q-factor larger than 800, are observed in the EL spectrum. The current dependence of the light emission properties is also discussed. By collecting the light emission through a single-mode fiber, we measure the output power of the LED to be about 6 pW under 3 mA injected current.
Keywords
Q-factor; circuit resonance; light emitting diodes; nanoelectronics; p-i-n diodes; photonic crystals; self-assembly; semiconductor quantum dots; EL; Ge; LED; PhC cavity mode; PhC nanocavity; Q-factor; current-injected light emitting diode; injected current; lateral PIN diode; light emission properties; photonic crystal nanocavity light emitting diode; resonant electroluminescence; self-assembled quantum dot; sharp resonant; temperature 293 K to 298 K; Cavity resonators; Current measurement; Light emitting diodes; Power generation; Power measurement; Q-factor; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location
San Francisco, CA
ISSN
0163-1918
Print_ISBN
978-1-4673-4872-0
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2012.6479115
Filename
6479115
Link To Document