Excellent device performance of 3D In0.53Ga0.47As gate-wrap-around field-effect-transistors with high-k gate dielectrics

Excellent device performance of 3D In_0.53Ga_0.47As gate-wrap-around field-effect-transistors (GWAFETs) have been demonstrated by a novel device design with innovative fabrication processes. The study of the fabricated 3D In_0.53Ga_0.47As GWAFETs with fin width (W_fin) of 40 nm to 200 nm shows that the device with narrower W_fin exhibits higher drive current, transconductance and better short channel effect (SCE) control. A good combination of current drive and subthreshold characteristics has been achieved by the device with 40 nm W_fin and 140 nm L_g, and it delivers I_on of 600 μA/μm at V_d=1 V and V_g-V_th=1 V, subthreshold swing (SS) of 80 mV/dec, and drain induced barrier lowering (DIBL) of 20mV/V. The observed significant improvement in electrostatic control was achieved by our GWA device architecture.