DocumentCode
3544571
Title
A 0.8 V, 360 nW Gm-C biquad based on FGMOS transistors [biquadratic filter]
Author
Rodriguez-Villegas, Esther
Author_Institution
Dept. of Electr. & Electron. Eng., Imperial Coll., London, UK
fYear
2005
fDate
23-26 May 2005
Firstpage
2156
Abstract
In this paper, a CMOS implementation of a Gm-C low voltage micropower biquad is presented. The filter is based on a novel floating gate MOS (FGMOS) Gm-C lossless integrator. Operating at 0.8 V with a bias current of 50 nA, the integrator has a power consumption of 120 nW achieving a dynamic range (DR) of 74 dB. The filter parameters can be adjusted by more than a decade having an upper cutoff frequency of 28 kHz for a 15.7 pF integrating capacitance.
Keywords
CMOS analogue integrated circuits; band-pass filters; biquadratic filters; integrating circuits; low-pass filters; low-power electronics; 0.8 V; 120 nW; 15.7 pF; 28 kHz; 360 nW; 50 nA; CMOS; FGMOS transistors; Gm-C biquad; adjustable filter parameters; floating gate MOS; lossless integrator; low voltage micropower biquad; second order lowpass/bandpass filter; Batteries; Cutoff frequency; Dynamic range; Equivalent circuits; Filters; Linearization techniques; MOSFETs; Noise level; Parasitic capacitance; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on
Print_ISBN
0-7803-8834-8
Type
conf
DOI
10.1109/ISCAS.2005.1465047
Filename
1465047
Link To Document