Title :
Study of piezoresistive properties of advanced CMOS transistors: Thin film SOI, SiGe/SOI, unstrained and strained Tri-Gate Nanowires
Author :
Casse, M. ; Barraud, S. ; Le Royer, Cyrille ; Koyama, Masanori ; Coquand, R. ; Blachier, D. ; Andrieu, F. ; Ghibaudo, Gerard ; Faynot, O. ; Poiroux, T. ; Reimbold, Gilles
Author_Institution :
CEA-Leti, Grenoble, France
Abstract :
We hereby present an exhaustive extraction and study of piezoresitive (PR) coefficients in advanced CMOS transistors. In particular, we have evidenced the dependence with channel thickness and channel material compositions (SiGe with various Ge contents). Moreover we report for the first time the measurement of PR coefficient on uniaxially strained and unstrained Tri-Gate Nanowires transistors.
Keywords :
Ge-Si alloys; MOSFET; nanowires; silicon-on-insulator; thin film devices; SiGe; advanced CMOS transistors; channel material compositions; channel thickness compositions; piezoresistive properties; thin film SOI; unstrained trigate nanowire transistor; Electron mobility; MOS devices; Nanowires; Phonons; Silicon; Silicon germanium; Stress;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479119
