Femtosecond interferometry for analysis of internal bond interface delamination in semiconductor devices

Author

Cartwright, Alexander N. ; Merkel, N.A. ; Blasczak, M.D.

Author_Institution

Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, NY, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

356

Lastpage

357

Abstract

Summary form only given. We developed an ultrafast Twyman-Green interferometer to monitor deformations in the bonding layer between two materials. Using femtosecond pulses with photon energies in the transparent regime of the top semiconductor layer, we can image, in real time, any debonding at internal interfaces. These composite multilayered semiconductor structures are widely used in electronic packaging.

Keywords

bonds (chemical); delamination; high-speed optical techniques; light interferometry; semiconductor device packaging; semiconductor device testing; semiconductor materials; bonding layer; composite multilayered semiconductor structures; electronic packaging; femtosecond light interferometry; femtosecond pulses; internal bond interface delamination; photon energies; real time; semiconductor devices; transparent regime; ultrafast Twyman-Green interferometer; Bonding; Delamination; Interferometry; Laser beams; Laser theory; Mirrors; Optical pulses; Pump lasers; Semiconductor lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676295

Filename

676295