DocumentCode :
3544595
Title :
Formation of Sn-Bi alloys through sequential electrodeposition
Author :
Fang, Lee Seen ; Haseeb, A.S.M.A. ; Yingxin, Goh
Author_Institution :
Fac. of Eng., Univ. of Malaya, Kuala Lumpur, Malaysia
fYear :
2012
fDate :
10-11 July 2012
Firstpage :
160
Lastpage :
163
Abstract :
The fabrication of near eutectic Sn-Bi alloy can be developed by reflowing a metal stack containing layers of Sn and Bi films. The Sn and Bi metal films are sequentially electroplated using two separate plating baths. Composition control of Sn-Bi alloy can be achieved by manipulating the thickness of constituent metal films. The thickness ratio of Sn to Bi is targeted to be approximately 0.97 to obtain the eutectic composition. Hence, the effect of thickness as a function of time is investigated. The thickness of electroplated layers increased with plating time but a more uniform thickness can be obtained from shorter plating periods. Methane sulphonate acid (MSA) based baths were fabricated for both Sn and Bi plating and the current density used is 20 mA/cm2 and 5 mA/cm2 respectively. Hydroquione (HQ) and gelatin were added into Sn plating solution bath as additives to improve the bath stability. The dual layer metal stack was reflowed at 170°C to enhance the interdiffusion between Sn and Bi layers. Field Emission Scanning Electron Microscope (FESEM) analyses coupled with Energy Disperse X-ray (EDX) analyses test have been performed to investigate the microstructure and composition of Sn-Bi alloy. Homogeneous microstructure of Sn-Bi alloy is obtained after reflow and near eutectic composition Sn- 54.6 wt.%Bi is achieved.
Keywords :
X-ray chemical analysis; bismuth alloys; electronics packaging; electroplating; eutectic alloys; field emission electron microscopy; gelatin; organic compounds; scanning electron microscopy; tin alloys; EDX analysis; FESEM analyses; HQ; MSA; Sn-Bi; composition control; current density; electronic packaging; electroplated layers; energy disperse X-ray analysis; eutectic composition; field emission scanning electron microscope analyses; flip-chip technology; gelatin; hydroquione; interdiffusion enhancement; metal films; metal stack; methane sulphonate acid; microstructure; plating baths; sequential electrodeposition; temperature 170 degC; Abstracts; Additives; Bismuth; Chemicals; Lead; Substrates; Tin; 2-step electroplating; Lead-free solder; Sn-Bi eutectic alloy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ASQED), 2012 4th Asia Symposium on
Conference_Location :
Penang
Print_ISBN :
978-1-4673-2687-2
Type :
conf
DOI :
10.1109/ACQED.2012.6320493
Filename :
6320493
Link To Document :
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