Title :
Beyond interface: The impact of oxide border traps on InGaAs and Ge n-MOSFETs
Author :
Lin, Dongyang ; Alian, A. ; Gupta, Swastik ; yang, Bo ; Bury, E. ; Sioncke, S. ; Degraeve, Robin ; Toledano, M.L. ; Krom, Raymond ; Favia, Paola ; Bender, Hugo ; Caymax, M. ; Saraswat, Krishna C. ; Collaert, Nadine ; Thean, A.
Author_Institution :
IMEC vzw, Leuven, Belgium
Abstract :
High-Mobility n-MOSFET options with Ge and InGaAs channels are of intense interests. As the well-known interfacial trap (Dit) problem appears now contained, new challenges are emerging from above the interface. The evidence of oxide border traps (BT) in high-k dielectrics and its effect on the on-state performance of Ge and InGaAs n-MOSFETs are presented in this study through combined trap and transport analyses. The impact of the oxide traps on device frequency response and threshold voltage (Vth) stability could challenge the commercial realization of the high mobility channel MOSFET.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; high-k dielectric thin films; indium compounds; Ge; InGaAs; frequency response; high mobility channel MOSFET; high-k dielectrics; interfacial trap problem; n-MOSFET; on-state performance; oxide border traps; threshold voltage stability; transport analyses; Charge carrier processes; Dispersion; Frequency measurement; Indium gallium arsenide; Logic gates; MOSFET circuits; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479121
