Multiplexed diode-laser sensor system for vapor-phase semiconductor wafer cleaning process monitoring

Author

Shang-I Chou ; Baer, D.S. ; Hanson, R.K.

Author_Institution

High Temp. Gasdynamics Lab., Stanford Univ., CA, USA

fYear

1998

fDate

3-8 May 1998

Firstpage

359

Lastpage

360

Abstract

Summary form only given. Vapor-phase wafer cleaning processes offer the potential to decrease chemical usage and water consumption significantly over current liquid cleaning methods. However, the mechanisms responsible for oxide etch processes and the precise role of each species are not completely understood. This project aims to develop a unique multiplexed diode-laser absorption sensor system capable of in situ measurements of gas temperature and the concentrations of HF and H/sub 2/O to enhance process modeling and control. The sensor system employs three narrow-linewidth DFB tunable diode lasers operating at IR wavelengths.

Keywords

chemical variables measurement; distributed feedback lasers; etching; laser tuning; measurement by laser beam; monitoring; semiconductor lasers; semiconductor technology; spectral line breadth; surface cleaning; IR wavelength; concentration measurement; gas temperature measurements; in situ measurements; multiplexed diode-laser absorption sensor system; multiplexed diode-laser sensor system; narrow-linewidth DFB tunable diode lasers; oxide etch processes; process modeling; vapor-phase semiconductor wafer cleaning process monitoring; Chemical processes; Cleaning; Electromagnetic wave absorption; Etching; Hafnium; Semiconductor diodes; Sensor systems; Temperature measurement; Temperature sensors; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

1-55752-339-0

Type

conf

DOI

10.1109/CLEO.1998.676300

Filename

676300