DocumentCode :
3544620
Title :
Multiplexed diode-laser sensor system for vapor-phase semiconductor wafer cleaning process monitoring
Author :
Shang-I Chou ; Baer, D.S. ; Hanson, R.K.
Author_Institution :
High Temp. Gasdynamics Lab., Stanford Univ., CA, USA
fYear :
1998
fDate :
3-8 May 1998
Firstpage :
359
Lastpage :
360
Abstract :
Summary form only given. Vapor-phase wafer cleaning processes offer the potential to decrease chemical usage and water consumption significantly over current liquid cleaning methods. However, the mechanisms responsible for oxide etch processes and the precise role of each species are not completely understood. This project aims to develop a unique multiplexed diode-laser absorption sensor system capable of in situ measurements of gas temperature and the concentrations of HF and H/sub 2/O to enhance process modeling and control. The sensor system employs three narrow-linewidth DFB tunable diode lasers operating at IR wavelengths.
Keywords :
chemical variables measurement; distributed feedback lasers; etching; laser tuning; measurement by laser beam; monitoring; semiconductor lasers; semiconductor technology; spectral line breadth; surface cleaning; IR wavelength; concentration measurement; gas temperature measurements; in situ measurements; multiplexed diode-laser absorption sensor system; multiplexed diode-laser sensor system; narrow-linewidth DFB tunable diode lasers; oxide etch processes; process modeling; vapor-phase semiconductor wafer cleaning process monitoring; Chemical processes; Cleaning; Electromagnetic wave absorption; Etching; Hafnium; Semiconductor diodes; Sensor systems; Temperature measurement; Temperature sensors; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-339-0
Type :
conf
DOI :
10.1109/CLEO.1998.676300
Filename :
676300
Link To Document :
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