Title :
Fabrication and characterization of silicon-based Ba0.7Sr0.3TiO3 thin films for FeFET applications
Author :
Saif, Ala´eddin A. ; Poopalan, P.
Author_Institution :
Sch. of Microelectron. Eng., Univ. Malaysia Perlis, (UniMAP), Kuala Perlis, Malaysia
Abstract :
Ferroelectric Ba0.7Sr0.3TiO3 thin films have been fabricated as MFIS and MFM configurations using sol-gel technique to study the possibility of using these films in FeFET applications. To ensure the quality of the films, the dielectric properties of the material within MFM structure have been investigated using an impedance analyzer which shows good quality for the films. The ferroelectric properties of the MFM type films were studied using Sawyer-Tower circuit. The films show hysteresis loop, its strength increases with the film thickness which is attributed the grain size effect. Whereas the ferroelectric properties of the MFIS type films were studied using capacitance-voltage (C-V) characteristics. The films show memory window its width increases with the film thickness which is also attributed the grain size effect.
Keywords :
barium compounds; dielectric hysteresis; elemental semiconductors; ferroelectric devices; ferroelectric thin films; field effect transistors; silicon; sol-gel processing; strontium compounds; thin film transistors; C-V characteristic; FeFET application; MFIS type-film; MFM type-film; Sawyer-Tower circuit; Si-Ba0.7Sr0.3TiO3; capacitance-voltage characteristic; dielectric property; ferroelectric thin film thickness; grain size effect; hysteresis loop; impedance analyzer; memory window; sol-gel technique; Capacitance-voltage characteristics; Dielectrics; Films; Grain size; Hysteresis; Silicon; BST thin film; Ferroelectric hysteresis; Memory windows; grain size;
Conference_Titel :
Quality Electronic Design (ASQED), 2012 4th Asia Symposium on
Conference_Location :
Penang
Print_ISBN :
978-1-4673-2687-2
DOI :
10.1109/ACQED.2012.6320498
