Title :
Impact of ultra low power and fast write operation of advanced perpendicular MTJ on power reduction for high-performance mobile CPU
Author :
Kitagawa, Eiji ; Fujita, S. ; Nomura, Keigo ; Noguchi, Hiroki ; Abe, Kiyohiko ; Ikegami, Kenshin ; Daibou, T. ; Kato, Yu ; Kamata, Chikayoshi ; Kashiwada, Shintaro ; Shimomura, Naoharu ; Ito, Junichi ; Yoda, Hidehiko
Author_Institution :
Corp. R&D Center, Toshiba Corp., Kawasaki, Japan
Abstract :
We demonstrated lower power consumption of mobile CPU by replacing high-performance (HP)-SRAMs with spin transfer torque (STT)-MRAMs using perpendicular (p)-MTJ. The key points that enable the low power consumption are adapting run time power gating architecture (shown in Fig. 1), and satisfying both fast and low-power writing, namely, 3 nsec and 0.09 pJ, of p-MTJ cell (shown in Fig. 3). As shown in Table 1, only our developed p-MTJ has achieved 3 nsec, 0.09 pJ. Thanks to the fast and low-power p-MTJ, the power consumption of cache memory could be reduced by over 80% without degradation of performance.
Keywords :
SRAM chips; cache storage; magnetic tunnelling; HP-SRAM; STT-MRAM; advanced perpendicular MTJ; cache memory; fast write operation; high-performance mobile CPU; high-performance-SRAM; p-MTJ cell; perpendicular-MTJ; power consumption; power reduction; run time power gating architecture; spin transfer torque-MRAM; ultralow power operation; Damping; Magnetic fields; Magnetic tunneling; Mobile communication; Programming; Random access memory; Switches;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479129