Title :
Voltage-induced switching of nanoscale magnetic tunnel junctions
Author :
Alzate, Juan G. ; Amiri, Pedram Khalili ; Upadhyaya, Parag ; Cherepov, Sergiy S. ; Zhu, Junan ; Lewis, Marlon ; Dorrance, Richard ; Katine, J.A. ; Langer, Juergen ; Galatsis, K. ; Markovic, Dejan ; Krivorotov, I. ; Wang, K.L.
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, Los Angeles, CA, USA
Abstract :
We demonstrate voltage-induced (non-STT) switching of nanoscale, high resistance voltage-controlled magnetic tunnel junctions (VMTJs) with pulses down to 10 ns. We show ~10x reduction in switching energies (compared to STT) with leakage currents <; 105 A/cm2. Switching dynamics, from quasi-static to the nanosecond regime, are studied in detail. Finally, a strategy for eliminating the need for external magnetic-fields, where switching is performed by set/reset voltages of different amplitudes but same polarity, is proposed and verified experimentally.
Keywords :
leakage currents; magnetic field effects; magnetic tunnelling; magnetoelectronics; nanoelectronics; VMTJ; amplitudes; leakage currents; magnetic-fields; nanoscale magnetic tunnel junctions; nanosecond regime; non-STT switching; quasi-static regime; reset voltages; switching dynamics; switching energy; voltage-controlled magnetic tunnel junctions; voltage-induced switching; Anisotropic magnetoresistance; Coercive force; Magnetic fields; Magnetic tunneling; Resistance; Switches; Voltage measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2012 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4673-4872-0
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2012.6479130
